| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device that can suppress the thermal deterioration of an ohmic characteristic between an ohmic electrode and a nitride semiconductor layer. SOLUTION: The nitride semiconductor device (nitride semiconductor laser device) has a p-side ohmic electrode 6 including an Si layer 6a having a thickness of about 1 nm formed in contact with the main surface of a p-type contact layer 5, and a Pd layer 6b having a thickness of about 20 nm formed on the Si layer 6a, while it has an n-side ohmic electrode 9 including an Si layer 9a having a thickness of about 1 nm formed in contact with the lower surface of an n-type GaN substrate 1, an Al layer 9b having a thickness of about 6 nm formed on the lower surface of the Si layer 9a, and a Pd layer 9c having a thickness of about 30 nm formed on the lower surface of the Al layer 9b. COPYRIGHT: (C)2009,JPO&INPIT
|
