| 摘要 |
A semi-conductor body is provided with an oxide coating by heating to 250-370 DEG C. in an atmosphere containing water vapour and the vapour of a substance which, at said temperature, at least partially volatilizes and yields hydrogen ions or alkali ions. Suitable alkali-ions may be provided by alkali metal salts, e.g. sodium acetate, sodium iodide or chloride, disodium hydrogen phosphate and sodium arsenite. Other suitable compounds include orthophosphoric acid and sulphuric acid. In the embodiment silicon wafers are sealed in a quartz tube containing water and sodium chloride and the tube is heated to 320 DEG C. for 16 hours producing an oxide coating on the silicon. Germanium may be used instead of silicon.ALSO:A semi-conductor body is provided with an oxide coating by heating to 250-370 DEG C. in an atmosphere containing water vapour and the vapour of a substance which, at said temperature, at least partially volatilizes and yields hydrogen ions or alkali ions. Suitable alkali-ions may be provided by alkali metal salts, e.g. sodium acetate, sodium iodide or chloride, disodium hydrogen phosphate and sodium arsenite. Other suitable compounds include orthophosphoric acid and sulphuric acid. In the embodiment silicon wafers are sealed in a quartz tube containing water and sodium chloride and the tube is heated to 320 DEG C. for 16 hours producing an oxide coating on the silicon. Germanium may be used instead of silicon.
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