| 摘要 |
#CMT# #/CMT# The light emitting diode has an epitaxy substrate (6) having a rough side with alternately arranged combs (61) and valleys (62). Each combs has a rough surface (610), formed with a close concentration of alternately arranged slots (611) and projections (612). An epitaxial film structure (7) is formed and coated on the combs and the valleys of the epitaxy substrate. The epitaxy substrate is made of a material, which is selected from the group with a spinal structure, which are sapphire, silicon carbide, silicon, zinc oxide, gallium arsenide, gallium nitride and magnesium aluminate. #CMT# : #/CMT# An independent claim is also included for a method for producing light emitting diode. #CMT#USE : #/CMT# Light emitting diode. #CMT#ADVANTAGE : #/CMT# The combs has a rough surface, formed with a close concentration of alternately arranged slots and projections, and epitaxial film structure is formed and coated on the combs and the valleys of the epitaxy substrate, and hence ensures low threading dislocation density. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows an expanded view of a rough epitaxy substrate. 6 : Epitaxy substrate 7 : Epitaxial film structure 61 : Combs 62 : Valleys 610 : Rough surface 611 : Slots 612 : Projections #CMT#INORGANIC CHEMISTRY : #/CMT# The epitaxial film is made of elements that are selected from boron, aluminum, gallium, indium, titanium, nitrogen, phosphorous, arsenic, bismuth and combinations of the same. Mask layer uses sand blast beads, which are selected from the alumina beads, silicon carbide beads, black alumina beads, steel balls, bronze alloy balls, ceramic beads, silica beads, boron carbide beads and combinations of the same. #CMT#METALLURGY : #/CMT# The metal material are selected from the group of element nickel, silver, aluminum, platinum, palladium, zinc, cadmium, copper and combinations of the same. |
