发明名称 MOSFET GATE DRIVE WITH REDUCED POWER LOSS
摘要 <p>A gate driver for a power MOSFET in, for example, a DC-DC converter switches the MOSFET between a fully-on condition and a low-current condition instead of switching the MOSFET between fully-on and fully-off conditions. The amount of charge that must be transferred to charge and discharge the gate of the MOSFET is thereby reduced, and the efficiency of the MOSFET is improved. A feedback circuit may be used to assure that the magnitude of current in the power MOSFET in its low-current condition is correct. Alternatively, a trimming process may be used to correct the magnitude of the voltage supplied by the gate driver to the gate of the power MOSFET in the low-current condition.</p>
申请公布号 WO2008153631(A1) 申请公布日期 2008.12.18
申请号 WO2008US05543 申请日期 2008.04.30
申请人 ADVANCED ANALOGIC TECHNOLOGIES, INC.;WILLIAMS, RICHARD, K. 发明人 WILLIAMS, RICHARD, K.
分类号 H03K17/687;H02M1/08 主分类号 H03K17/687
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