发明名称 |
METHOD OF FORMING A LAYER OF MATERIAL USING AN ATOMIC LAYER DEPOSITION PROCESS |
摘要 |
Disclosed is a method of forming a layer of material using an atomic layer deposition (ALD) process in a process chamber of a process tool. In one illustrative embodiment, the method includes identifying a target characteristic for the layer of material, determining a precursor pulse time for introducing a precursor gas into the process chamber during the ALD process to produce the target characteristic in the layer of material, and performing the ALD process that comprises a plurality of steps wherein the precursor gas is introduced into the chamber for the determined precursor pulse time to thereby form the layer of material.
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申请公布号 |
WO2007146537(B1) |
申请公布日期 |
2008.12.18 |
申请号 |
WO2007US69091 |
申请日期 |
2007.05.17 |
申请人 |
MICRON TECHNOLOGY, INC.;RUEGER, NEAL;SMYTHE, JOHN |
发明人 |
RUEGER, NEAL;SMYTHE, JOHN |
分类号 |
C23C16/455;C23C16/509 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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