| 摘要 |
A semiconductor device and manufacturing method thereof is provided to realize the minute P-channel MOSFET into the absolute value with low-threshold. A semiconductor device comprises a silicon oxide film less than 5 nm and the aluminium in a silicon substrate in order. In a gate(4) structure, a insulating layer and a gate electrode having relative dielectric constant which are greater than a silicon oxide film are laminated. A MOS transistor has an area-source and drain region by the impurity spreading layer. The aluminium is included by using a thermal process. The layer diffusing an aluminum atom or an aluminium ion from insulating layer having relative dielectric constant which is greater than the silicon oxide film to the silicon oxide film or the interface of the silicon oxide film and silicon substrate is set up.
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