| 摘要 |
A manufacturing method of a semiconductor device having a recess gate is provided to resolve the problem of misalignment between a recess and a gate and the problem of circuit-shorting between landing plug contact and a gate in order to improve the electrical characteristic by performing subsequent processes including the upper film formation and patterning of the gate pattern etc. A manufacturing method of the semiconductor device comprises: a step for forming the hard mask pattern having a opening for a recess(25) on a semiconductor substrate(21); a step for forming the recess by etching the semiconductor substrate by the etching barrier to the hard mask pattern; a step for forming the gate insulating layer(26) in the recess surface; a step for forming the first gate electrode which reclaims the part of the recess and opening from the hard mask pattern surface to the spot which is downwardly directed; a step for forming the first insulating layer pattern which reclaims the opening rest on the first gate electrode; a step for removing hard mask pattern; and a step for forming a source/drain region within the semiconductor substrate by performing a dopant implanting process in a first insulating layer pattern by mask.
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