| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device and a manufacturing method therefor which suppress a characteristic deterioration to improve reliability. <P>SOLUTION: According to the light-emitting device and the manufacturing method therefor, a light-emitting semiconductor chip having a light-emitting unit with a protective film is mounted on the light-emitting device. The protective film includes a first dielectric film made of an oxynitriding aluminum, a second dielectric film made of a silicon nitride or an oxynitriding aluminum, and a third dielectric film made of an oxide or fluoride. The first dielectric film is positioned to be closer to the light-emitting unit than the second dielectric film, and the second dielectric film is positioned to be closer to the light-emitting unit than the third dielectric film. <P>COPYRIGHT: (C)2009,JPO&INPIT |
