DEVICE AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LAYER, MANUFACTURING METHOD FOR GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LAMP

摘要

PROBLEM TO BE SOLVED: To provide a device capable of preventing the formation of a nitride film on the surface of a target, capable of accurately controlling a film thickness and capable of forming a group III nitride semiconductor layer having an excellent crystallinity.

SOLUTION: The device for manufacturing the group III nitride semiconductor layer forms the group III nitride semiconductor layer on a substrate 11 by a sputtering method. In the device, a first plasma generating region 45a arranging the target 47 containing a group III element and sputtering the target 47 and generating raw-material particles consisting of a raw material comprised in the target 47 and a second plasma generating region 45b arranging the substrate 11 and generating a nitrogen-element containing plasma are fitted in a chamber 41. In the device, the first plasma generating region 45a and the second plasma generating region 45b are separated by a shielding wall 45 with an opening section 43 for supplying the upper section of the substrate 11 with the raw-material particles.

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