| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device dispensing with a process for removing an upper layer. <P>SOLUTION: The manufacturing method of the semiconductor device comprises: a process for forming a layer 17 to be etched made of silicon on a semiconductor substrate 10; a process for forming a mask layer 20 that comprises an intermediate layer 22 made of a silicon oxide film and an upper layer 24 made of a polycrystalline silicon on the layer 17 to be etched; and a process for etching the layer 17 to be etched with the mask layer 20 as a mask and removing the upper layer 24. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
