| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an element isolation structure of a semiconductor device and the element isolation structure of the semiconductor device, in which the generation of stress in an STI structure can be prevented. SOLUTION: The method for forming the element isolation structure of the semiconductor device is at least provided with a trench formation process of forming a trench in a semiconductor substrate; and a lamination process of forming an insulative alternating multilayer film by alternatively laminating, in at least an interior of the trench, by atomic layer deposition method, a plurality of first insulating films which apply tension stress to the semiconductor substrate, and a plurality of second insulating films which apply compressive stress to the semiconductor substrate, and burying the trench with the alternating multilayer film. COPYRIGHT: (C)2009,JPO&INPIT |
