发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a highly integrated semiconductor device capable of having a significantly compact and thin form, and to provide the manufacturing method thereof. SOLUTION: A semiconductor package element is formed by the steps of: etching an electrically conductive plate made of copper etc. in advance so as to leave a part corresponding to an external electrode-terminal forming portion on one side of a semiconductor chip mounting region; mounting a chip on the region; wire-bonding the land; sealing them with a resin; and cutting the external electrode-terminal forming portion so as to form an L-shape electrode at the corner of the resin. The semiconductor device is manufactured by sticking a pair of the semiconductor package elements or by integrally forming the package elements in series, or further by sticking and joining them into an integrated device. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008306228(A) 申请公布日期 2008.12.18
申请号 JP20080247583 申请日期 2008.09.26
申请人 SEIKO EPSON CORP 发明人 NAKAYAMA TOSHIKI
分类号 H01L23/50 主分类号 H01L23/50
代理机构 代理人
主权项
地址