| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a display device high in response speed by specifying an etching condition capable of reducing a contact resistance between an Al alloy film and a transparent pixel electrode to be adaptable to the upsizing of a liquid crystal display device. SOLUTION: The method for manufacturing the display device includes: a process to form the Al-alloy film on a substrate; a process to form a layer insulating film on the Al-alloy film; a process to form a contact hole in the layer insulating film; and a process to form a transparent conductive film in contact with the Al-alloy film. The process to form the contact hole includes a dry etching process that is carried out in an atmosphere containing at least sulfur hexafluoride gas, oxygen gas and noble gas, and also, the following condition is satisfied: 0.4≤(flow rate of oxygen gas)/[(flow rate of sulfur hexafluoride gas)+(flow rate of oxygen gas)]≤0.9. COPYRIGHT: (C)2009,JPO&INPIT
|
