发明名称 METHOD FOR ACHIEVING CONTROLLED ESR MULTILAYER CHIP CAPACITOR HAVING LOW ESL
摘要 A method for performing controlled ESR(Equivalent Serial Resistance) multilayer chip capacitor having low ESL(Equivalent Serial Inductance) is provided to perform stabilization of a power circuit by lining-up ESR in a wide range. A method for performing controlled ESR multilayer chip capacitor having low ESL comprises the following steps: a step for arranging an inner electrode of a first and second polarity(+,-) between dielectric layers; a step for laminating one block which has inner electrodes(1010, 1020, 1030, 1040, 1050, 1060, 1070) more than 2 consecutively arranged as top and bottom; a step for determining a mean value of total leads(1010a, 1020a, 1020b, 1030a, 1040a,1040b, 1050a, 1060a, 1060b, 1070a) of two inner electrodes which mutually faces in block; a step for determining the number of lead of each inner electrode inside the block; and a step for determining a location of the leads of each inner electrode.
申请公布号 KR20080110180(A) 申请公布日期 2008.12.18
申请号 KR20070058596 申请日期 2007.06.14
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 LEE, BYOUNG HWA;WI, SUNG KWON;CHUNG, HAE SUK;PARK, DONG SEOK;PARK, SANG SOO;PARK, MIN CHEOL
分类号 H01G4/30;H01G4/40 主分类号 H01G4/30
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