| 摘要 |
<P>PROBLEM TO BE SOLVED: To simplify procedures of processing of data update for nonvolatile memory and processing of dealing with abnormality such as power discontinuity, and to shorten the processing time. <P>SOLUTION: The nonvolatile semiconductor storage device is provided with a nonvolatile memory provided with a plurality of memory cell blocks each comprising a plurality of addresses, and a memory control means for controlling batch erasure processing in a memory cell block unit, write processing in a storage area unit of the prescribed number of addresses or a bit unit, and data update processing in the memory cell block unit, wherein the data update processing includes a plurality of pieces of element processing, a memory cell block is provided with a data area and a status information storage area for storing status information which can specify element processing being executed, and each of the status information has such a data configuration that status information storage area can be updated to status information of the element processing to be executed next only by executing overwrite processing. <P>COPYRIGHT: (C)2009,JPO&INPIT |
