| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a capacitorless DRAM and manufacturing method therefor. <P>SOLUTION: The capacitorless DRAM has a substrate that includes a source, a drain, and a channel, a gate formed on the channel of the substrate, and a Hall preserving unit formed underneath the channel. The substrate is formed with an insulating layer, and a semiconductor layer, including the source, drain, and channel formed on the insulating layer. The Hall preserving unit comprises other semiconductor layer and a Hall preservation body inside the other semiconductor layer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
