| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a miniaturizable acceleration sensor capable of properly maintaining detection accuracy, and to provide its manufacturing method. <P>SOLUTION: First and second semiconductor layers SL1, SL2 are laminated across an insulating layer IL1. An acceleration sensor element is formed on the first semiconductor layer SL1. A control element ED for controlling the acceleration sensor element is formed on the second semiconductor layer SL2. A through-hole TH is formed in the second semiconductor layer SL2, and an insulating layer IL2 is formed so as to cover the wall surface of the through-hole TH. A through-wire HI is formed in the through-hole TH for connecting electrically the acceleration sensor element to the control element ED. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
