| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a new field effect transistor using a semiconductor nanowire, and its manufacturing method. <P>SOLUTION: The field effect transistor includes a gate electrode film 14, the plurality of semiconductor nanowires 11 disposed so as to pass through the gate electrode film 14, a source electrode film 12 formed so as to be in contact with one end of each of the semiconductor nanowires 11 to connect them, and a drain electrode film 13 formed so as to be in contact with the other end of each of the semiconductor nanowires to connect them. The source electrode film 12 and the drain electrode film 13 are composed of a metal. An insulating layer 15 is arranged between the gate electrode film 14 and the semiconductor nanowires 11. The types of the semiconductors at one end and the other end of the semiconductor nanowires 11 are either P type or N type. The type of the semiconductor at the center part held by the one end and the other end is different from the type of the semiconductor at the one end and the other end. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
