发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 A TFT(Thin Film Transistor) array panel and a method for manufacturing the same are provided to simplify the manufacturing process of the TFT having top gate structure. A channel layer(151) includes oxide. A gate insulating layer(140) is formed on the channel layer. A gate electrode(124) is formed on the gate insulating layer. An interlayer insulating film(160) is formed with the gate electrode. A data line(170) has a source electrode(173). A drain electrode(175) includes the first conductive layer and the second conductive layer. A pixel electrode(191) is extended from the first conductive layer of the drain electrode. A protective film(180) is formed on data line and drain electrode. A filler block(320) is formed on the protective film.
申请公布号 KR20080109998(A) 申请公布日期 2008.12.18
申请号 KR20070058216 申请日期 2007.06.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JE HUN;KIM, DO HYUN;JEONG, CHANG OH
分类号 G02F1/136 主分类号 G02F1/136
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