OPTOELECTRONIC HEADLIGHT, METHOD FOR PRODUCTION OF AN OPTOELECTRONIC HEADLIGHT, AND A LUMINESCENCE DIODE CHIP

摘要

The headlight has a GaN based light emitting diode chip, which has two emission areas. The two GaN based light emitting diode chips are always included with an emission area. The emission areas are controlled depending on each other and are formed differently in a top view assigned to a main plane of extension, and are shaped differently in size and are non-rectangular shape and are oriented differently. The shape of one of the issue areas is not rectangular in a top view on the main plane of extension. Independent claims are also included for the following: (1) a method for manufacturing electromagnetic radiation emitting optoelectronic headlights (2) an electromagnetic radiation emitting luminescence diode chip.