METHOD AND APPARATUS FOR TESTING THE DOPING CONCENTRATION OF SEMICONDUCTORS

摘要

An arrangement for testing the doping concentration existing below a surface of a semiconductor body having opposite parallel faces in which a beam of monochromatic light is directed against the face to be tested for reflection therefrom and an electric field is set up within the semiconductor body perpendicular to the opposite faces of the body. Relative movement is produced between the light beam and semiconductor body so that the light beam travels over the face being tested and the amount of the reflected light, which is measured, varies with and constitutes a measure of the doping concentration.