| 摘要 |
An improved semiconductor inverter circuit, when used alone or in cascaded pluralities, consumes little or no power at steady state. Each inverter stage employs load and switching transistors serially connected across power supply terminals, all transistors advantageously but not necessarily being of the insulated gate field effect (IGFET) type. A bootstrap capacitor is connected across the gate and source of the load transistor, and a third IGFET employed to selectively charge and discharge the capacitor.
|
