发明名称 |
Silver, gallium, and oxygen contact for indium phosphide |
摘要 |
A semiconductor transferred electron device of the kind which includes indium phosphide as a major constituent is provided with a cathode consisting of oxidized silver gallium. The cathode preferably contains 4 times more silver than gallium by weight, and the oxygen content is preferably from 2 to 20 atomic per cent of the gallium content of the cathode. This improved device provides high electrical to microwave conversion efficiencies for a high proportion of devices produced together in any given batch.
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申请公布号 |
US3977015(A) |
申请公布日期 |
1976.08.24 |
申请号 |
US19750563432 |
申请日期 |
1975.03.31 |
申请人 |
BRITISH SECR DEFENCE |
发明人 |
IRVING, LEONARD DAVID;PATTISON, JAMES EDWARD;REES, HUW DAVID |
分类号 |
H01L47/02;(IPC1-7):H01L29/46;H01L47/00 |
主分类号 |
H01L47/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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