| 发明名称 |
Method for electrolytically etching semiconductor material |
| 摘要 |
A method of etching a submerged semiconductor material structure in which an electrically connected metal mask is utilized to electrolytically etch a semiconductive substrate without damaging the remainder of the structure.
|
| 申请公布号 |
US4054497(A) |
申请公布日期 |
1977.10.18 |
| 申请号 |
US19760727742 |
申请日期 |
1976.09.29 |
| 申请人 |
HONEYWELL INC. |
发明人 |
MARSHALL, JAMES F. |
| 分类号 |
G01L9/00;H01L29/84;H04R23/00;(IPC1-7):C25F3/12 |
主分类号 |
G01L9/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
