| 发明名称 |
HIGH FREQUENCY COMPOUND TRANSISTOR |
| 摘要 |
<p>PURPOSE:To improve rise characteristics at Class C operation of transistors and enable stable high output power to be obtained even at low input power by providing first, second transistors and a resistor between input and output matching circuits within one dielectric substrate as specified.</p> |
| 申请公布号 |
JPS5342680(A) |
申请公布日期 |
1978.04.18 |
| 申请号 |
JP19760117594 |
申请日期 |
1976.09.30 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
IWASE NOBUO;YABE HIROSHI |
| 分类号 |
H01L25/18;H01L21/331;H01L25/04;H01L29/417;H01L29/72;H01L29/73 |
主分类号 |
H01L25/18 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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