发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To decrease the space between the elements and thus to enhance the integrated performance, by forming a conduction region through diffusion to the insulator film coated on the semiconductor substrate with apertures drilled and the forming through ion injection the buried layers which are different in the impurity density or the conduction type into the conduction region.</p>
申请公布号 JPS5392678(A) 申请公布日期 1978.08.14
申请号 JP19770006372 申请日期 1977.01.25
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 SATOU KAZUO
分类号 G11C17/00;G11C17/12;H01L21/8246;H01L27/04;H01L27/112;H01L29/78 主分类号 G11C17/00
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