| 摘要 |
<p>A sputtering apparatus includes a single cathode on which a plurality of targets of different materials are supported, with a rotatable anode, supporting a substrate and/or substrates, spaced apart from the cathode in a chamber containing an inert gas at a selected pressure. A potential difference is applied between the cathode and anode to produce a plasma for each target, which is sputtered by accelerated ions within the plasma. Apertured plates and shields are positioned between the targets and the anode to effectively separate the plasmas into separate columns. The sputtered material from each target has access to the substrate/substrates only through that target's column. The shields are biasable by a voltage gradient to simultaneously and equally control the current in each plasma. Each column has a separate bias ring associated therewith, which is biasable to a separate voltage to individually control the plasma in its associated column. Also included are movable shutters. The various parts are assembled so that when the substrate is aligned with any target only sputtered material from that target reaches the substrate through the plasma column and from no other target. As the anode is rotated from the first target to align with the second target, during the transition the deposition takes place continuously, first from the first target, followed by deposition form both targets and finally from the second target, thereby controlling the interface structure and preventing any interlayer contamination and providing a near perfect controlled interface.</p> |
