| 发明名称 |
CONTROLLED RECTIFYING ELEMENT OF SEMICONDUCTOR |
| 摘要 |
PURPOSE:To increase theiinterrupting current, by providing unevenness on the base layer so that the base layer beneath the emitter region is shallow and the base layer being the gate region adjacent to it is deep, in 4 layer 3 junction element where the N type emitter regions are formed with separation in island in the P type base layer. |
| 申请公布号 |
JPS5413275(A) |
申请公布日期 |
1979.01.31 |
| 申请号 |
JP19770077772 |
申请日期 |
1977.07.01 |
| 申请人 |
MEIDENSHA ELECTRIC MFG CO LTD;NIPPON INTAANASHIYONARU SEIRIY |
发明人 |
UDAGAWA HISAO;YAMAGUCHI YASUO;SUEOKA TETSUO |
| 分类号 |
H01L29/74;H01L29/10 |
主分类号 |
H01L29/74 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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