METHOD OF PRODUCING A P-DOPED REGION IN A BODY OF SEMICONDUCTOR MATERIAL,申请号CAD731835-传众专利搜索

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发明名称	METHOD OF PRODUCING A P-DOPED REGION IN A BODY OF SEMICONDUCTOR MATERIAL
摘要
申请公布号	CA731835(A)	申请公布日期	1966.04.05
申请号	CAD731835	申请日期
申请人	SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT	发明人	KURT RAITHEL
分类号		主分类号
代理机构		代理人
主权项
地址

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