FORMING METHOD OF ELECTRODES FOR COMPOUND SEMICONDUCROR LIGHT EMITTING ELEMENTS

摘要

PURPOSE:To improve the ohmic contact between a light emitting element body and a metal by making the temperature of the body 100 deg.C to 250 deg.C at the time of e vaporating the metal and gold-zinc alloy layer on the required portions of the p type compound semiconductor layer of the light emitting element body. CONSTITUTION:An n type GaP 11a and p type GaP layer 12 are subsequently formed on an n type GaP crystal substrate 11 to form a p-n junction 13, whereby the element body is obtained. An Au thin layer 24 is evaporated on said p type layer 13 side, and an Au-Zu alloy layer 24a is evaporated thereon. At this time, the body is made within a temperature range of 100 deg.C to 250 deg.C. The electrodes 24, 24a having been obtained in this way provide good ohmic contact and yet the bondability of the lead wire 14b is stable.