| 摘要 |
PURPOSE:To form a fine pattern on a worked object by adhering the 2nd and 3rd substance layers onto the worked object such as a semiconductor wafer, by over- etching the 2nd layer after providing an opening to the 3rd layer, and by causing particle beams to strike onto the worked object through it while changing the incident angle. CONSTITUTION:On worked object 1 such as Si wafer, thick porous oxidixed film 2 is formed which is obtained through high-temperature oxidation after anode-oxidizing formation, and on it, Mo film 3 is vapor-deposited which is easy to form a cylinder-crystal shape. Next, fine pattern 4 is formed on film 3 by photolithograph or electron-beam exposing method, and film 3 is etched by using a phosphoric etching solution to make an opening in film 3. With remaining film 3 used as a mask, film 2 is etched by using hydro fluoric acid to form side-etched hole 5. Next, the inside of hole 5 is irradiated with vertical ions 6 or slant ions 8 through pattern 4 and ion work of wafer 1 is attained while selecting either irradiation position 7 or 9. |
