| 摘要 |
PURPOSE:To establish the memory circuit of one transistor type MOS-RAM having a simple circuit constitution. CONSTITUTION:One transistor type memory cells 1 to 4 consisting of transistor TrQM and capacitive element CM are given at the cross point of the word lines W0 to W3 crossing with a pair of digit line D. A pair of lines D goes down the potential of the common source B of Tr 5,6 in cross connection in the sense amplifier through driving Tr7 and amplifies the potential difference of the node A at sense initiation. The gate of Tr7 is driven with the drive pulse phis, and the source is connected to the reference potential GND and the drain is to the common source of Tr5,6 in cross connection, constituting Tr5,6 into contact A. Further, the line D and the contact A are coupled with Tr8,9 of which gate is driven with the pulse phiT. The charge of the line D is made at the intermediate potential of about 2 V with the precharge transistors Tr10,11 before sensing, and is made with the charge up transistors Tr12,13 after sensing. |
