| 摘要 |
PURPOSE:To prevent the evil effect of the needle pressure from being given to the PN junction when the electrode layer is exfoliated and bonded by forming the non- doped layer onto the layer to which the nitrogen atom of the luminous center is doped. CONSTITUTION:Non-doped layer 10 to which no nitrogen atom of the luminous center is doped is formed to the substrate consisting of layer 4 (N-doped layer) to which the nitrogen atom is doped with N-type GaP substrate 1, N-type GaAs1-XPX layer 2, N-type GaAs0.15 P0.85 layer 3 and N-type GaAs0.15P0.85 layer respectively. Then the P-type impurity such as the zinc or the like is diffused deep from the main surface of layer 10 of the substrate in order to form P-type duffusion layer 15. And then the PN junction is formed into layer 4. After this, plus electrode 16 and minus electrode 17 are provided. For the LED of such structure, the light caused by the PN junstion is absorbed more or less at layer 4 but not absorbed virtually at the non-doped layer. Furthermore, no exfoliation is caused with the coating of the electrode layer since the PN junction features a sufficient depth. |
