| 摘要 |
PURPOSE:To reduce output errors owing to change in atmospheric temperature (environmental temperature) by superposing a detecting element of good infrared ray absorption ability and good reflection ability making use of pyroelectric effect and connecting both by the specific method thereby forming the infrared ray detector. CONSTITUTION:NiCr vapor deposition electrodes 12, 13 are provided so as to have a resistance value of about 600 + or - 50OMEGA on the front and back of a thin film 11 such as of PVF2 having pyroelectric effect to form a detecting element 1 of good infrared ray absorption ability. Similarly, Al vapor deposition electrodes 22, 23 are provided so as to have a resistance value of about 1 to 10OMEGA on the front and back of a pyroelectric thin film 21 to form an element 2 of good reflection. Next, the elements 1, 2 are superposed in the order of the element 1, 2 with respect to incident light 3 so that the output polarities of both elements become opposite as against temperature change. These are then connected like the element 1 - element 2 - gate of amplifying FET 4 - drain of FET - element 1, whereby the infrared ray detector is formed. |
