Semiconductor device

摘要

The invention relates to a semiconductor device in which a crossing connection is realized by using parts of a layer of refractory conductive material already present for masking as a part of a current conductor separated from a crossing conductor by an insulation layer. The mask of refractory material may also define the regions in which switching transistors are realized. The invention results in important advantages, in connection with density and crossing connections, in particular in I2L-circuits.