| 摘要 |
PURPOSE:To facilitate the formation of electrodes by depositing Ni and the like on the main surface of one side of a substrate which has a diffused layer on the main surface of the other side, applying conductive paste whose main components are Ag, Au, and Al on the diffused layer, and applying the conductive paste whose main component is Ag on the Ni side at the same sintering temperature. CONSTITUTION:A conductive paste 4 whose main components are Ag, Au, and Al are provided on a diffusion layer 2 which forms a pn junction. On an n-type substrate, is deposited Ni which has the same effect to raise the surface-impurity concentration, and is applied a conductive paste 5 whose main component is Ag. The paste 4 is well contacted at temperatures (550-650 deg.C) lower than before, and the electrode which has low contact resistance and is not subjected to the break through the shallow diffusion layer can be reproduced. The paste 5 is sintered in concurrence with the sintering of the paste 4 and makes ohmic contact with the substrate, generating nickel silicide at the boundary between the substrate and Ni, thereby the resistance is decreased. When the sintering temperature exceeds 650 deg.C, break through occurrs. At the temperature lower than 550 deg.C, the contact resistance is increased, and the transducing efficiency is degraded. |
