发明名称 SEMICONDUCTOR CRYSTAL GROWING DEVICE
摘要 PURPOSE:To obtain a flawless grown layer, by maintaining the quantities of melting liquids contacting with a substrate constant by inserting a holder with a substrate hole between a solution tank with reservoirs for the solutions of various kinds and a bottom plate with a waste-fluid pool and by contacting the substrate exposed to the substrate hole with the melting liquids by sliding the tank and the bottom plate. CONSTITUTION:A solution tank 17 with liquid reservoirs which are partitioned by means of partition portions 171 and hous the melting liquids 16 of various kinds, and a bottom plate 14 with a waste-fluid pool 13 are oppositely arranged, and a substrate holder 12 that a substrate hole 123 is mounted in a slanting, up-and-down shape is inserted between the tank and the bottom plate. In this case, lower floor plates 15 with holes 151 for discharging used melting liquids 16 into the pool 13 are put between the holder 12 and the bottom plate 14 and an upper floor plate 18 with a through hole 181 for pouring the melting liquids 16 into the substrate hole 123 between the holder 12 and the solution tank 17. This device is constituted in this way, a substrate 11 that must be grown being exposed to the substrate hole 123 is installed, the solution tank 17 and the bottom plate 14 are simultaneously slid holding the holder 12, the substrate 11 is successively moistened with the melting liquids 16 and a crystal is grown.
申请公布号 JPS5556625(A) 申请公布日期 1980.04.25
申请号 JP19780129615 申请日期 1978.10.20
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMANAKA HARUYOSHI;KAZUMURA MASARU
分类号 C30B19/06;C30B19/10;H01L21/208;H01L33/28;H01L33/30;H01S5/00 主分类号 C30B19/06
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