| 摘要 |
PURPOSE:To obtain a resist pattern in high accuracy for a short time, by collectively preparing a pattern, which is a size smaller than fixed dimensions, by exposure when forming the resist pattern, and by additionally preparing a pattern in a peripheral portion needing precision by exposure by electron beams. CONSTITUTION:When preparing a resist pattern 21, which width is a and which consists of a square A-D, a resist pattern 31 is first prepared by collectively exposing a mask of a square A'-D' with width c, which is a size smaller than the pattern 21. In this case, the relationship of a=2b+c, c>=d is formed among width a and c, contraction allowance b and photo-exposure minimum dimensions d, and a pattern in c<d is not used. Thus, a pattern 31', which is a size smaller than the pattern 21, is left on a substrate 10, and the peripheral portion is coated with a resist 50 for electron rays and pre-baked. And the precise pattern consisting of A-D, which buries the circumference 51 of the pattern 31', is gained by exposing the resist 50 by electron rays and by developing the resist. |
