| 摘要 |
PURPOSE:To stabilize operational characteristics by using diffusion matching type MOS transistor for the circuits which are susceptible to characteristic variation due to the threshold voltage variation and using usual MOS transistor for other parts in a MOS integrated circuit device whose channel length is 2mum or less. CONSTITUTION:In the short 4 channel region whose channel length is 2mum or less, threshold voltage VT of the diffusion matching MOS transistor has a smaller variation compard with VT of the short channel MOS Tr, and further, VT of the neghboring DSA.MOS Tr has also a small variation. Since the variation of VT in the short channel MOS Tr is determined by the processing precision, the variation of VT in the neighbring short channel MOS Tr becomes large. Consequently, by using DSA. MOS Trs for circuits (F.F., etc.) which are susceptible to VT variation, an integrated circuit device exhibiting stable operational characteristics can be obtained. |
