| 摘要 |
PURPOSE:To perform minute pattern forming without diffraction phenomenon as well with little heat radiation, by using as ultraviolet rays irradiating source, flash discharge lamp which is cold light source and by which planned quantity of light in full is available instantaneously, in case of extreme minute processing method for supper LSI. CONSTITUTION:Silicon wafer is coated with polybuten-1 sulfon PBS in photosensitive character 1849Angstrom , in a thickness of 1mum. Form flash discharge lamp filled with xenon gas, flash light in pulse width wherein t=20mus, J=48 joule, i.e. selected in Q=41 is irradiated onto the above mentioned PBS via photomask and is exposed. Then, unnecessary part is washed with solvent and is removed and required pattern is formed. |
