| 摘要 |
PURPOSE:To form the pattern of a resist layer free of any defect by carrying out a plurality of times of photomechanical process. CONSTITUTION:When a negative type resist is applied on a Cr plate 5 prepared by forming a Cr film 4 on a glass plate 3, and the plate is exposed and developed to form a resist layer 6, the resist layer has partly a defect d. Accordingly, for example, the plate is processed as a temperature of 130 deg.C for 30 minutes and cooled, and a negative type resist is again applied. Then, the plate is superimposed on the pattern of the first layer 6 with a high accuracy, and exposed and developed to form a resist layer 7. Although a partial defect in the layer 7, the defects d and e are in different positions and therefore a resist layer 8 of a double layer structure has a predetermined pattern and no defect. Consequently, when the Cr plate 5 is subjected to etching, a photomask free of any defect can be obtained. |
