| 摘要 |
<p>PURPOSE:To reduce parasitic capacity when accomodated in a glass container by a method whrein, when the mesa-type trapezoidal region are provided in the central part of the semiconductor substrate surface and thereon a metallic electrode is formed, the bottom area is made large enough and the sum of electrode thickness and the hight of the trapozoidal region is prescribed. CONSTITUTION:The part, where a Schottky junction is to be formed in the central paet of a semiconductor substrate 1, is made trapezoidal and the rest is shaped into a mesa type. Next, the whole surface is covered with an SiO2 film, a Schottky barrier metal 3 is attached on a trapezoidal region and thereon a ball-shaped silver electrode 4 having a bottom area larger than the trapezoidal region diameter, whereby the sum of the electrode 4 thickness and the mesa part height is so prescribed that it has a value at least more than 1/3 of the distance from the electrode 4 tip to the end of the substrate 1 surface. In this way, it means that an air gap having a much smaller dielectric constant compared with a film between the electrode 4 bottom and the substrate 1, thus reducing remarkably parasitic capacity and improving high frequency properties.</p> |
