| 摘要 |
PURPOSE:To reduce a leakage current and improve the properties by laying polycrystalline GaAs thin film between the activated layer constituting a Schottky barrier gate FET consisting of GaAs and a heatproof insulating thin film. CONSTITUTION:An AlxGa1-xAs layer 2, and an n-type GaAs activated layer are laminated on GaAs substrate 1 being grown epitaxially and thereon a polycrustalline GaAs layer 4, which is thin about 100Angstrom , is attached being evaporated. Next, a diamond heat sink plate 6 is made to adhere to this layer 4 through heatproof insulating inorganic adhesives 5 mainly consisting of silica and almina, removing only the layer 2 by etching in sulusion of HF 50% and peel off the substrate 1 thereon. Thereafter anodic oxidation is performed to make the layer 3 evenly thin, the whole surface is alloyed with AuGe-Ni through evaporation, and is selectively etched to form the source and drain electrodes 7 and 8. Further Al is attached through evaporation being lifted-off to gain the electrode 9, the whole surface is covered with polycrystalline GaAs layer 10 through flash evaporation to be passivated. |
