| 摘要 |
PURPOSE:To form a surface protective layer having no apprehension of being disconnected in a semiconductor device by lowering the density of phosphorus (P) of the surface of a phosphorus silicate glass (PSG) layer formed on the surface of a semiconductor substrate making contact with aluminum wire whose density is lower than that of phosphorus in the PSG layer itself. CONSTITUTION:A silicon dioxide (SiO2) layer 1 and a PSG layer 2 containing high content of phosphorus (P) are formed sequentially on the surface of a silicon substrate 3, and an opening 7 for leading an electrode is perforated therethrough. Then, this substrate is dipped in a boiled distilled water. Thus, the content of the P in the surface layer 8 is reduced. After an aluminum wire 4 is formed thereon, a PSG layer 5 is formed thereon, and an opening 9 is formed at a bonding pad. |
