ELECTROPHOTOGRAPHIC RECEPTOR

摘要

PURPOSE:To obtain the electrophotographic receptor which is superior in heat resistance, surface hardness, dark attenuation characteristics, etc. by providing the P-N junction composed of the amorphous silicon layer formed by a glow discharge decomposition method and further providing an organic semiconductor layer thereon on a conductive substrate. CONSTITUTION:A P-type (or N-type) amorphous silicon (a-Si) intermediate layer 2 of thicknesses about 0.2-5mu and an N-type (or P-type) a-Si photoconductive layer 3 of thicknesses about 0.5-5mu are laminated on a conductive substrate 1 to form a P-N junction and further an N-type (or P-type) organic photosemiconductor layer 4 of thicknesses about 8-50mu is formed thereon to form the electrophotographic receptor. The above-mentioned P-N junction is formed by a P-type a-Si intermediate layer containing boron of e.g. about 10,000ppm or less and an N-type a-Si photoconductor layer containing phosphorus of about 5ppm or less.