| 摘要 |
PURPOSE:To prevent the faulty operation due to alpha-rays by a method wherein the wiring on an insulating substrate, whose atomic weight is more than lead, and which contains no impurities and has thickness transmitting no alpha-rays, and an element forming surface of a semiconductor chip are opposed each other and sealed. CONSTITUTION:An element forming surface of a semiconductor chip 1 is opposed to an insulating substrate 2 with high purity of an Si monocrystal, sapphire or the like while directing the element forming surface toward a lower surface, and bumps 3 are soldered with wiring 4 on the substrate 2. The substrate 2 is fastened into a ceramic base 5, the wiring terminals of the substrate are connected 7 to the leads 6 of the base, and a cover 8 in ceramics is sealed with glass 9. alpha-Rays from an upper surface expire during the time when they pass through chip 1 itself, and cannot reach to a depletion layer of the element forming surface. alpha-Rays from a lower surface are obstructed by means of the insulating substrate 2. Thus, a function of the element is not damaged by alpha-rays. The insulating substrate is made of a pure material, whose atomic weight is more than lead, its thickness is made 50mum or more, and high purity resin, etc. having a high heat resisting property, such as an Si monocrystal, sapphire, polyimide resin, etc. is available. |
