| 摘要 |
PURPOSE:To enable a uniform and close contact between a photomask and a wafer, by providing level difference between a substrate surface with a pellet pattern formed and a scribed area and a photomask periphery. CONSTITUTION:A plurality of desired pellet patterns 2, such as a chromium film are formed on polished glass substrate 1, pattern 2 is covered with photoresist pattern 3, the surface of substrate 1 is etched, for example, in depth >=1mum using pattern 3 as a mask for etching, and level difference is formed between scribed area 4 and surface 5 with pellet patterns not formed, and glass face 6 covered with chromium pattern 2. Preparation of a mask is finished by removing photoresist 3, thus permitting a uniform and close contact state between the mask and the water to be obtained, and separation of the wafer to be made easily after exposure. |
