| 摘要 |
The apparatus may be used for growing large-sized single crystals, such as optical and scintillation alkali halide single crystals, as well as semiconductor single crystals, from melt. The apparatus comprises means for pulling a single crystal from melt and a crucible made of two containers mounted coaxially in each other to define an annular space therebetween to which a charge is fed. The inner container protrudes downwards relative to the outer container, and melt is contained in the protruding portion thereof. Apertures are provided in the side wall of the inner container at the level of the bottom wall of the outer container for overflow of melt from the annular space to the inner container. Independent heaters are provided under the inner and outer container, respectively. |
