| 摘要 |
PURPOSE:To decrease side etching by a method wherein the SiO2 insulating film is spatterred by high frequency, controlling the pressure of gas and minuteness is improved with approach to the surface. CONSTITUTION:When spattering the SiO2 film on a semiconductor substrate 1 by high frequency, the pressure of Ar gas is reduced with lapse of time (for example, 3X10<-4>Torr from 4X10<-3>), and the SiO2 film 5 is formed. Consequently, if an etching mask 8 is formed and the film 5 is etched by an etching liquid of NH4F: HF=4:1, side etching is l', and the side etching is made smaller than side etching l in the case when the constitution of the film 5 is uniform. Thus, the width of a wiring layer is reduced and the wiring layer is highly integrated while a wetproof property and stability can be improved because of high minuteness with approach to the surface. |
