| 摘要 |
PURPOSE:To eliminate a wrong effect caused by the air inflow into a tube by a method wherein a semiconductor wafer is heat treated in the device that a furnace core tube for a cooling having an N2 zone is connected to a furnace core tube for a heat treatment. CONSTITUTION:The furnace core tube for cooling 10 with the N2 zone 12 is connected by fitting contact to the furnace core tube for heat treatment 2b which inserted in the heat treatment furnace 1b, makes N2 inflow from an N2 inlet 11, the surface oxidation or other of the semiconductor wafer 5b is prevented in such a way that the air inflow to an exhaust zone 13 from the outside will not counterflow to the N2 zone 12. In this constitution, at the time of the wafer of semiconductor 5b is taken out, the sufficient effect can be obtained since the wafer can be cooled at the temperature not exceeding the oxidation temperature in the cooling furnace core. |
